Flip Chip Bonder for Surface Activated COC FC2000 (CoC)
Features
- Realizes chip level bonding using the surface activated SAB method. This enables fully-automatic mass production suitable for COC and other types of 3D bonding, as well as bonding optical elements and MEMS.
- Surface activation using RF plasma enables room temperature (low temperature) bonding in an air atmosphere, as opposed to the conventional high vacuum process. (Patent pending)
- An automatic tray supply system and N2 purge system enable automatic management, under optimal conditions, of everything from plasma cleaning to bonding. (Patent pending)
- Achieves high accuracy alignment of ±1µm/2µm (3σ).
Specifications
| Substrate size [mm] | 0.2L × 0.2W × 0.05t-20L × 20W × 1t |
|---|---|
| Chip orientation | Face up (2 inch tray) |
| Cycle time | 8 [sec/chip] *1 |
| Alignment accuracy | ±2 [µm] (X,Y) *2 / ±1 [µm] (X,Y) *2 (high accuracy alignment mode) |
| Bonding force | Ultra-low pressure head : 0.049-14.7 |
| Standard head :1.96-294 | |
| Heated tool temperature [°C] | RT-450 Ceramic heater |
| Power | 3-phase, AC200V ±10%, 50/60Hz ±1Hz or 3-phase, AC220V ±10%, 50/60Hz ±1Hz, 10kVA |
| Air pressure [MPa] | Dry air 0.49 |
| Vacuum [kPa] | -80 |
| Gas used | Ar |
| Equipment dimensions [mm] | Approx. 1900W × 1145D × 1970H |
| Weight [kg] | Approx. 1500 |
Notes
*1 Cycle time does not include processing time (i.e. loading , bonding and vacuum release).
*2 Accuracy measurement is conducted using Toray-standard substrates.
Options
- Heat stage
- Ultra-low pressure head
Bonding Process
Principle of Room Temperature Bonding
Source: Suga Laboratory, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
Increasing Accuracy in the Semiconductor Package Field (COC3D Bonding Structure)
