Flip Chip Bonder (for SiP/COC/CSP ) FC3000
Features
- Optimal system integration based on bonding process that the customer requires.
- Short cycle time of 1.7 sec/chip is attainable in combination with high alignment accuracy of ±2µm, by moving search function and highly stiff frame structure.
- The system is exchangeable among ultrasonic bonding process, thermo-compression process and Solder process, by a simple change-over. (Head change-over time : about 15 minutes)
- It is possible to set a variety of temperature and pressure profiles, with the unique ceramic heater and pressure control method.
- Fine pitch and high precision interconnection is possible at relatively low temperatures for a package with multiple bumps, by the unique DSS (Dual Support System) structure of its ultrasonic bonding head.
Specifications
| Substrate size [mm] | 80L × 40W-250L × 80W t=0.2-1 | |
|---|---|---|
| Substrate types | Glass Epoxy, FPC, Ceramics, etc. | |
| Chip size [mm] | Thermo-compression process *1 | 3L × 3W-20L × 20W t=0.05-1 |
| Ultrasonic bonding process *2 | 3L × 3W-15L × 15W t=0.3-0.8 | |
| Ultra low pressure bonding process | 3L × 3W-10L × 10W t=0.05-1 | |
| Number of chip types | Wafer : 1, Waffle tray : Max 3 | |
| Chip orientation *3 | Face up (Wafer 6”, 8”, 12” or Waffle tray 2”, 3”, 4”) | |
| Cycle time *4 | 1.7 [sec/chip] | |
| Alignment accuracy (3σ) *5 | ±2 [µm] (X, Y) | |
| Bounding force [N] | High-stiffness head | 4.9-490 |
| Ultra low pressure head | 0.049-19.8 | |
| Bonding head type | Ultrasonic head | 50kHz, 150W temperature RT, 100 [°C] , 150 [°C] , 180 [°C] , 200 [°C] |
| Ceramic heater head | temperature RT-450 [°C] | |
| Power | 3-phase, AC200V ±10%, 50/60Hz ±1Hz or 3-phase, AC220V ±10%, 50/60Hz ±1Hz, 10kVA | |
| Air pressure [MPa] | Dry air 0.49 | |
| Vacuum [kPa] | -80 | |
| Equipment dimensions [mm] | Approx. 1730W × 1420D × 1600H (Dimensions of substrate loading / unloading unit are not included) | |
| Weight [kg] | Approx. 2200 (Weights of substrate loading / unloading unit are not included) | |
| Standard function | High-stiffness head | |
| Z-axis control | ||
| Automatic thermo-calibration | ||
| Automatic coplanarity adjustment | ||
| Data logger | ||
Notes
*1 Slim chip (Min. 1.0mm Wide) and large-sized chip (Max. 30.0mm Long × 30.0mm wide) can be processed with an optional heat tool.
*2 Slim chip (Min. 1.0mm Wide) and long chip (Max. 28.0mm Long × 10.0mm wide) can be processed with an optional horn.
*3 12" wafer and waffle tray can be processed with options.
*4 Cycle time dose not include processing time (i.e. loading, bonding and vacuum release).
*5 Accuracy measurement is taken using Tray-standard substrates.
Process
The system is exchangeable among ultrasonic bonding process, thermo-compression process and solder process, by a simple change-over.
Options
- Glass backup stage
- Vacuum pump
- Ionizer
- Wafer mapping
- Pre-heat & post-heat stage
- Ceramic heat stage (20 × 20mm)
- N2 Purge
- Main bonding unit
- Dispenser unit
- Constant temperature oven for substrate
